Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

✍ Scribed by Köhrbrück, R.; Munnix, S.; Bimberg, D.; Larkins, E. C.; Harris, J. S.

• Book ID: 121686446
• Publisher: American Institute of Physics
• Year: 1989
• Tongue: English
• Weight: 576 KB
• Volume: 54
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.100898