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Optical in-situ analysis of GaAs/AlAs/GaAs and GaAs/(Al)GaAs/GaAs atomic layer growth using GaCl3, AlCl3 and AsH3

โœ Scribed by M. Akamatsu; S. Narahara; T. Kobayashi; F. Hasegawa

Book ID
103617571
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
422 KB
Volume
82-83
Category
Article
ISSN
0169-4332

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๐Ÿ“œ SIMILAR VOLUMES

X-Ray Diffraction Analysis of the In/Ga
X-Ray Diffraction Analysis of the In/Ga and In/Al Interface Diffusion in Superlattices (GaAs)n(InAs)(AlAs)n/GaAs(001) and (AlAs)n(InAs)(GaAs)n/GaAs(001)
โœ Jose Fayos; Mercedes Perez-Mendez ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice