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CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors

✍ Scribed by T.B. Joyce; T.J. Bullough; P. Kightley; C.J. Kiely; Y.R. Xing; P.J. Goodhew

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 379 KB
Volume: 120
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(92)90392-v

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