𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical gain in strain-free and strained layer GaXIn1−XAs/InP superlattices

✍ Scribed by E. Zielinski; F. Keppler; K. Streubel; F. Scholz; R. Sauer; W.T. Tsang

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
450 KB
Volume
5
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain measurements in InxGa1-xAs/GaAs s
Strain measurements in InxGa1-xAs/GaAs strained-layer superlattices by photomodulated reflectance
✍ V. Lemos; C. Vázquez-López; F. Cerdeira 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 140 KB

We performed a series of Raman and photoreflectance measurements on several \(I n_{x} G a_{1-x} A s / G a A s\) strained layer superlattices of the same period but of different alloy compositions and substrate orientations. Both types of measurements are used in order to estimate the in-plane strain

Stokes shift in one-side modulation-n-do
Stokes shift in one-side modulation-n-doped-strained GaxIn1 − xAs/InP asymmetric quantum well
✍ Qu Fanyao; A.L.A. Fonseca; O.A.C. Nunes 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 287 KB

The effects of strain on the Stokes shift in one-side modulation-doped Ga x In 1-x As/InP asymmetric quantum wells (AQWs) are systematically investigated. By making use of a self-consistent Poisson-Schrödinger solver in the frame of a finite difference method, the quasi-Fermi levels and the band ben