Strain measurements in InxGa1-xAs/GaAs strained-layer superlattices by photomodulated reflectance

✍ Scribed by V. Lemos; C. Vázquez-López; F. Cerdeira

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 140 KB
• Volume: 13
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1993.1036

✦ Synopsis

We performed a series of Raman and photoreflectance measurements on several (I n_{x} G a_{1-x} A s / G a A s) strained layer superlattices of the same period but of different alloy compositions and substrate orientations. Both types of measurements are used in order to estimate the in-plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination.