𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical gain in non-abrupt GaAs/AlxGa1−x quantum well lasers

✍ Scribed by E.C. Ferreira; E.L. Albuquerque; J.A.P. da Costa; P.W. Mauriz; V.N. Freire

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
77 KB
Volume
17
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.

✦ Synopsis

The optical gain of unstrained non-abrupt GaAs=AlxGa1-xAs single quantum wells as a function of the energy of the radiation, width of the well, and interface thickness is calculated. Both the transversal electrical and the transversal magnetic light polarization are considered. All sub-bands transitions in the quantum well are taken into account. It is shown that the existence of non-abrupt interfaces decreases the gain and shifts its spectra to higher frequencies.

📜 SIMILAR VOLUMES

Spin splitting in AlxGa1−xAs/GaAs/AlyGa1
Spin splitting in AlxGa1−xAs/GaAs/AlyGa1−yAs/AlxGa1−x As quantum wells
✍ Ya-Fei Hao 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 440 KB

The spin splitting of the Al x Ga 1 À x As/GaAs/Al y Ga 1 À y As/Al x Ga 1 À x As (x a y) step quantum wells (QWs) is theoretically investigated by the method of finite difference. The Al concentration in the barrier and in the step can dramatically affect the Rashba spin splitting induced by the in

Theoretical analysis of optical gain in
Theoretical analysis of optical gain in PbSe/Pb1–xSrxSe quantum well lasers
✍ Y. H. Sun; L. J. Xu; B. Zhang; Q. F. Xu; R. Wang; N. Dai; H. Z. Wu 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 451 KB

## Abstract In this article, theoretical calculation of optical gain has been performed for IV–VI lead salt PbSe/Pb~1–__x__~Sr~__x__~Se quantum well lasers emitting at about 4–6 µm by using an analytic gain expression. The reduced density of states and interband transition matrix elements used in t