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Optical alignment and resonant Raman scattering in GaAs/AlxGa1-xAs multiple quantum wells

✍ Scribed by A. Frommer; E. Cohen; Arza Ron; L. Pfeiffer


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
296 KB
Volume
53
Category
Article
ISSN
0022-2313

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Accumulation layer and interface effects
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The electron energy levels in doped nonabrupt GaAs/Al x Ga 1-x As single quantum wells 100 Γ… wide are calculated. Interface widths varying from zero to four GaAs unit cells are taken into account, as well as band bendings of 0-90 meV. It is shown that interface effects on the energy levels are impor