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Theoretical analysis of optical gain in PbSe/Pb1–xSrxSe quantum well lasers

✍ Scribed by Y. H. Sun; L. J. Xu; B. Zhang; Q. F. Xu; R. Wang; N. Dai; H. Z. Wu

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
451 KB
Volume
206
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

In this article, theoretical calculation of optical gain has been performed for IV–VI lead salt PbSe/Pb~1–x~Sr~x~Se quantum well lasers emitting at about 4–6 µm by using an analytic gain expression. The reduced density of states and interband transition matrix elements used in the calculation were derived in the framework of the k·p model. Peak optical gain as a function of carrier concentration and radiative current density was calculated. The material parameters and laser structures that affect device performance were analyzed in details.

📜 SIMILAR VOLUMES

Optical gain in non-abrupt GaAs/AlxGa1−x
Optical gain in non-abrupt GaAs/AlxGa1−x quantum well lasers
✍ E.C. Ferreira; E.L. Albuquerque; J.A.P. da Costa; P.W. Mauriz; V.N. Freire 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 77 KB

The optical gain of unstrained non-abrupt GaAs=AlxGa1-xAs single quantum wells as a function of the energy of the radiation, width of the well, and interface thickness is calculated. Both the transversal electrical and the transversal magnetic light polarization are considered. All sub-bands transit