Optical gain characteristics of staggered InGaN quantum wells lasers
β Scribed by Zhao, Hongping; Tansu, Nelson
- Book ID
- 120284400
- Publisher
- American Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 647 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0021-8979
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π SIMILAR VOLUMES
## Abstract Using varied stripe length method we systematically studied optical gain properties of blueβgreen 3βnm InGaN QWs grown on __c__βplane and (11β22) semipolar substrates. We determined that for such structures when the product of modal net gain at peak and stripe length exceeds factor 5 th
## Abstract Electronic and optical properties of 440 and 530βnm staggered InGaN/InGaN/GaN quantumβwell (QW) lightβemitting diodes are investigated using the multiband effectiveβmass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req