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Gain characteristics of InGaN-GaN quantum wells

✍ Scribed by Hongtao Jiang; Singh, J.

Book ID
117869694
Publisher
IEEE
Year
2000
Tongue
English
Weight
166 KB
Volume
36
Category
Article
ISSN
0018-9197

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## Abstract A high indium‐content blue light‐emitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVD‐grown In~0.2~Ga~0.8~N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region.