Optical defects in ion damaged 6H-silicon carbide
β Scribed by P. Musumeci; L. Calcagno; M.G. Grimaldi; G. Foti
- Book ID
- 113287773
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 537 KB
- Volume
- 116
- Category
- Article
- ISSN
- 0168-583X
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π SIMILAR VOLUMES
In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron
A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (Sic). Defect structures to be discussed include shallow nitrogen donors, group-III acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the si