✦ LIBER ✦

Damage evolution and recovery in 4H and 6H silicon carbide irradiated with aluminum ions

✍ Scribed by W.J. Weber; W. Jiang; Y. Zhang; A. Hallén

Book ID: 114165743
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 188 KB
Volume: 191
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(02)00602-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-dose aluminum and boron implants in

Low-dose aluminum and boron implants in 4H and 6H silicon carbide

✍ Saks, N. S.; Agarwal, A. K.; Ryu, S-H.; Palmour, J. W. 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 365 KB

Implantation and annealing of aluminum i

Implantation and annealing of aluminum in 4H silicon carbide

✍ M. Rambach; F. Schmid; M. Krieger; L. Frey; A.J. Bauer; G. Pensl; H. Ryssel 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 229 KB

Spin-lattice relaxation in aluminum-dope

Spin-lattice relaxation in aluminum-doped semiconducting 4H and 6H polytypes of silicon carbide

✍ Hartman, J. Stephen; Berno, Bob; Hazendonk, Paul; Hens, Philip; Ye, Eric; Bain, 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 198 KB

Damage formation and recovery in C+-irra

Damage formation and recovery in C+-irradiated 6H–SiC

✍ W Jiang; W.J Weber; S Thevuthasan; D.E McCready 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 124 KB

Muonium states and dynamics in 4H and 6H

Muonium states and dynamics in 4H and 6H silicon carbide

✍ H.N. Bani-Salameh; Y.G. Celebi; K.H. Chow; B.E. Coss; S.F.J. Cox; R.L. Lichti 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 297 KB

Erbium-related band gap states in 4H– an

✍ Pasold, G.; Albrecht, F.; Grillenberger, J.; Grossner, U.; Hülsen, C.; Witthuhn 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 202 KB