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Erbium-related band gap states in 4H– and 6H–silicon carbide

✍ Scribed by Pasold, G.; Albrecht, F.; Grillenberger, J.; Grossner, U.; Hülsen, C.; Witthuhn, W.; Sielemann, R.

Book ID: 121715700
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 202 KB
Volume: 93
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1539539

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