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Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams

✍ Scribed by T. Tsvetkova; P. Sellin; R. Carius; O. Angelov; D. Dimova-Malinovska; J. Zuk


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
635 KB
Volume
267
Category
Article
ISSN
0168-583X

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## Abstract We report on in‐situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ion‐beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of ∼5 Γ— 10^17^ ions/cm^2^ at ion in