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Formation of shallow donors and acceptors in silicon irradiated with either electrons or high-energy ions and annealed at temperatures of 400–700 °C

✍ Scribed by I. V. Antonova; S. A. Smagulova; L. N. Safronov


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
140 KB
Volume
0
Category
Article
ISSN
1862-6351

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