In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
โ Scribed by Kong Lingmin; Cai Jiafa; Wu Zhengyun; Gong Zheng; Fang Zhidan; Niu Zhichuan
- Book ID
- 105631281
- Publisher
- Wuhan University of Technology
- Year
- 2006
- Tongue
- English
- Weight
- 465 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1000-2413
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