Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

✍ Scribed by Wei Du; Fujian Zong; Honglei Ma; Jin Ma; Min Zhang; Xianjin Feng; Hua Li; Zhigang Zhang; Peng Zhao

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 130 KB
• Volume: 41
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200510689

✦ Synopsis

Polycrystalline Zn 3 N 2 films are prepared on Si and quartz glass substrates by RF magnetron sputtering at room temperature. The structural and optical properties are studied by X-ray diffraction and double beam spectrophotometer, respectively. X-ray diffraction indicates that the Zn 3 N 2 films deposited on Si and quartz glass substrates both have a preferred orientation in ( 321) and ( 442), also are cubic in structure with the lattice constant a=0.9847 and 0.9783 nm, respectively. The absorption coefficients as well as the film thickness are calculated from the transmission spectra, and their dependence on photon energy is examined to determine the optical band gap. Zn 3 N 2 is determined to be an indirect-gap semiconductor with the band gap of 2.11(2) eV.