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Optical approach to subband structure in a-Si quantum well

✍ Scribed by Kiminori Hattori; Hiroaki Okamoto; Yoshihiro Hamakawa

Book ID: 115987150
Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 296 KB
Volume: 114
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(89)90691-1

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## Abstract We have theoretically demonstrated population inversion between two conduction subbands in a silicon quantum well in a triple‐well structure with Si and SiGe, considering tunneling, radiative‐ and non‐radiative‐acoustic, and __g__‐phonon transitions. The gain spectra are then calculated