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Dispersive subband-resonant nonlinearity in amorphous Si/SiO2 quantum well structures

โœ Scribed by Zayats, A.V.; Golonzka, O.V.; Repeyev, Yu.A.; Vinogradov, E.A.


Book ID
117867839
Publisher
IEEE
Year
1994
Tongue
English
Weight
481 KB
Volume
30
Category
Article
ISSN
0018-9197

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## Abstract We have theoretically demonstrated population inversion between two conduction subbands in a silicon quantum well in a tripleโ€well structure with Si and SiGe, considering tunneling, radiativeโ€ and nonโ€radiativeโ€acoustic, and __g__โ€phonon transitions. The gain spectra are then calculated