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Calculated gain and threshold current density for interconduction-subband transition in Si triple-quantum-well-structures

✍ Scribed by Sumitra Ghosh; Bratati Mukhopadhyay; P. K. Basu


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
119 KB
Volume
35
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

We have theoretically demonstrated population inversion between two conduction subbands in a silicon quantum well in a triple‐well structure with Si and SiGe, considering tunneling, radiative‐ and non‐radiative‐acoustic, and g‐phonon transitions. The gain spectra are then calculated and threshold current densities are estimated. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 470–475, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10641