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Optical and electrical properties of dislocations in plastically deformed GaN

โœ Scribed by Yonenaga, I.; Ohno, Y.; Yao, T.; Edagawa, K.


Book ID
124141882
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
910 KB
Volume
403
Category
Article
ISSN
0022-0248

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The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu