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Operating temperature of single-electron transistors

โœ Scribed by I. I. Abramov; I. A. Goncharenko; E. G. Novik


Book ID
110123576
Publisher
SP MAIK Nauka/Interperiodica
Year
1998
Tongue
English
Weight
52 KB
Volume
24
Category
Article
ISSN
1063-7850

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Room temperature operated single electro
โœ K. Kurihara; H. Namatsu; M. Nagase; T. Makino ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 305 KB

We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia