One phonon assisted electron Raman scatt
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R. Betancourt-Riera; J.M. Bergues; R. Riera; J.L. MarΔ±Μn
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Article
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1999
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Elsevier Science
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English
β 198 KB
The di erential cross section (DCS) for an electron Raman scattering (ERS) process in a semiconductor quantum dot (QD) of spherical geometry regarding phonon-assisted transitions, is calculated for T = 0 K. We present a complete description of the phonon modes of spherical structures embedded in ano