One phonon assisted electron Raman scattering in spherical semiconductor quantum dots

✍ Scribed by R. Betancourt-Riera; J.M. Bergues; R. Riera; J.L. Marı́n

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 198 KB
• Volume: 5
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(99)00038-7

✦ Synopsis

The di erential cross section (DCS) for an electron Raman scattering (ERS) process in a semiconductor quantum dot (QD) of spherical geometry regarding phonon-assisted transitions, is calculated for T = 0 K. We present a complete description of the phonon modes of spherical structures embedded in another material, including a correct treatment of the mechanical and electrostatic matching condition at the surface. We consider the Fr ohlich interaction to illustrate the theory for a GaAs=AlAs system. Electron states are considered to be completely conÿned within the QD. We also assume single parabolic conduction and valence bands. The emission and excitation spectra are discussed for di erent scattering conÿgurations and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted. The one-phonon-assisted ERS studied here can be used to provide direct information about the electron band structure of these systems.