One-dimensional transport phenomena in GaAs heterojunction structures
β Scribed by M. Pepper; R.J. Brown; C.G. Smith; D.A. Wharam; M.J. Kelly; R. Newbury; H. Ahmed; D.G. Hasko; D.C. Peacock; J.E.F. Frost; D.A. Ritchie; G.A.C. Jones
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 402 KB
- Volume
- 168
- Category
- Article
- ISSN
- 0378-4371
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## Abstract We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution Xβray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temper