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Electron transport properties in GaAs/AlGaAs quasi one-dimensional fets

✍ Scribed by T. Ohshima; M. Okada; M. Matsuda; N. Yokoyama; A. Shibatomi


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
368 KB
Volume
5
Category
Article
ISSN
0749-6036

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Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs heterostructure, using a recently developed shallow mesa etch technique. Four terminal high field magnetoresistance measurements at temperatures down to 2 K have been performed on samples with etched