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On the validity of the standard SPICE model of the diode for simulation in power electronics

✍ Scribed by Massmoudi, N.; M'bairi, D.; Allard, B.; Morel, H.


Book ID
119777068
Publisher
IEEE
Year
2001
Tongue
English
Weight
115 KB
Volume
48
Category
Article
ISSN
1932-4529

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## Abstract This paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified Shichman–Hodges model, in which the generation current,