In this paper, we study the global behavior of the time-dependent drift-diffusion model for semiconductor devices. Under certain assumptions on the mobilities, we first prove the existence of the global weak solutions with uniform \(L^{*}\) bounds. Then we show that the system, when considered as a
β¦ LIBER β¦
On the Time-Dependent Drift-Diffusion Model for Semiconductors
β Scribed by W.F. Fang; K. Itoi
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 963 KB
- Volume
- 117
- Category
- Article
- ISSN
- 0022-0396
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Global Solutions of the Time-Dependent D
β
W.F. Fang; K. Ito
π
Article
π
1995
π
Elsevier Science
π
English
β 1010 KB
The Bipolar Hydrodynamic Model for Semic
β
R. Natalini
π
Article
π
1996
π
Elsevier Science
π
English
β 218 KB
Uniqueness for the Three-Dimensional Tim
β
Jishan Fan
π
Article
π
1999
π
Elsevier Science
π
English
β 67 KB
This paper proves the uniqueness of solutions to the time dependent drift diffusion semiconductor equations in three dimensions with L 2 initial data. This answers the open problem raised by da Veiga.
A finite-volume scheme for the multidime
β
Claire Chainais-Hillairet; Marguerite Gisclon; Ansgar JΓΌngel
π
Article
π
2010
π
John Wiley and Sons
π
English
β 609 KB
The Relaxation of the Hydrodynamic Model
β
Ling Hsiao; Kaijun Zhang
π
Article
π
2000
π
Elsevier Science
π
English
β 232 KB
Quasi-neutral Limit of a Nonlinear Drift
β
Ingenuin Gasser; Ling Hsiao; Peter A. Markowich; Shu Wang
π
Article
π
2002
π
Elsevier Science
π
English
β 139 KB
The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit 1 Supported by the EU-funded TMR-network Asymptotic Methods in Kineti