✦ LIBER ✦

Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors

✍ Scribed by Ingenuin Gasser; Ling Hsiao; Peter A. Markowich; Shu Wang

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 139 KB
Volume: 268
Category: Article
ISSN: 0022-247X
DOI: 10.1006/jmaa.2001.7813

No coin nor oath required. For personal study only.

✦ Synopsis

The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit 1 Supported by the EU-funded TMR-network Asymptotic Methods in Kinetic Theory (Contract Number ERB FMRX CT97 0157).

📜 SIMILAR VOLUMES

Diffusion relaxation limit of a nonisent

Diffusion relaxation limit of a nonisentropic hydrodynamic model for semiconductors

✍ Yeping Li 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 155 KB

## Abstract In this paper, we discussed a general multidimensional nonisentropic hydrodynamical model for semiconductors with small momentum relaxation time. The model is self‐consistent in the sense that the electric field, which forms a forcing term in the momentum equation, is determined by the

The Relaxation of the Hydrodynamic Model

The Relaxation of the Hydrodynamic Model for Semiconductors to the Drift–Diffusion Equations

✍ Ling Hsiao; Kaijun Zhang 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 232 KB

A Coupled Schrödinger Drift-Diffusion Mo

A Coupled Schrödinger Drift-Diffusion Model for Quantum Semiconductor Device Simulations

✍ P. Degond; A. El Ayyadi 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 297 KB

In this paper, we derive a coupled Schrödinger drift-diffusion self-consistent stationary model for quantum semiconductor device simulations. The device is decomposed into a quantum zone (where quantum effects are expected to be large) and a classical zone (where they are supposed negligible). The S

Asymptotics of Initial Boundary Value Pr

Asymptotics of Initial Boundary Value Problems for Hydrodynamic and Drift Diffusion Models for Semiconductors

✍ Ling Hsiao; Tong Yang 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 142 KB

A nonconforming exponentially fitted fin

A nonconforming exponentially fitted finite element method for two-dimensional drift-diffusion models in semiconductors

✍ Riccardo Sacco; Emilio Gatti; Laura Gotusso 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 432 KB 👁 2 views

A new nonconforming exponentially fitted finite element for a Galerkin approximation of convectiondiffusion equations with a dominating advective term is considered. The attention is here focused on the drift-diffusion current continuity equations in semiconductor device modeling. The scheme extends

Galerkin Approximation of Weak Solutions

Galerkin Approximation of Weak Solutions of the Drift Diffusion Model for Semiconductors Coupled with Maxwell's Equations

✍ F. Jochmann 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 590 KB

We prove global existence of weak solutions of the drift diffusion model for semiconductors coupled with Maxwell's equations for the electromagnetic field by using a Galerkin method. The recombinations term for the density of electrons and holes may depend on the densities, the gradient of the densi