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Global Solutions of the Time-Dependent Drift-Diffusion Semiconductor Equations

โœ Scribed by W.F. Fang; K. Ito

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
1010 KB
Volume
123
Category
Article
ISSN
0022-0396

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โœฆ Synopsis

In this paper, we study the global behavior of the time-dependent drift-diffusion model for semiconductor devices. Under certain assumptions on the mobilities, we first prove the existence of the global weak solutions with uniform (L^{*}) bounds. Then we show that the system, when considered as a dynamical system, possesses an absorbing set with respect to the (L^{\prime}) topology. 1995 Academic Press. Inc.

๐Ÿ“œ SIMILAR VOLUMES

Asymptotic Behavior of the Drift-Diffusi
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โœ W.F. Fang; K. Ito ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 582 KB

In this paper, we continue our study on the asymptotic behavior of the drift-diffusion model for semiconductor devices. We assume the mobilities are constants, and show in this case the dynamical system has a compact, connected, maximal attractor that attracts sets that are bounded in terms of the \

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A number of transient and steady-state finite element formulations of the semiconductor drift-diffusion equations are studied and compared with respect to their accuracy and efficiency on a simple test structure (the Mock diode). A new formulation, with a consistent interpolation function used to re