𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Asymptotic Behavior of the Drift-Diffusion Semiconductor Equations

✍ Scribed by W.F. Fang; K. Ito

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
582 KB
Volume
123
Category
Article
ISSN
0022-0396

No coin nor oath required. For personal study only.

✦ Synopsis

In this paper, we continue our study on the asymptotic behavior of the drift-diffusion model for semiconductor devices. We assume the mobilities are constants, and show in this case the dynamical system has a compact, connected, maximal attractor that attracts sets that are bounded in terms of the (L^{x_{2}}) norm. We then prove the differentiability of the semigroup defined by the solution map, and give an upper bound for the Hausdorff dimension of the attractor. (f) 1995 Academic Press. Inc.

πŸ“œ SIMILAR VOLUMES

Global Solutions of the Time-Dependent D
Global Solutions of the Time-Dependent Drift-Diffusion Semiconductor Equations
✍ W.F. Fang; K. Ito πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 1010 KB

In this paper, we study the global behavior of the time-dependent drift-diffusion model for semiconductor devices. Under certain assumptions on the mobilities, we first prove the existence of the global weak solutions with uniform \(L^{*}\) bounds. Then we show that the system, when considered as a

Comparative study of finite element form
Comparative study of finite element formulations for the semiconductor drift-diffusion equations
✍ J. T. Trattles; C. M. Johnson πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 183 KB πŸ‘ 2 views

A number of transient and steady-state finite element formulations of the semiconductor drift-diffusion equations are studied and compared with respect to their accuracy and efficiency on a simple test structure (the Mock diode). A new formulation, with a consistent interpolation function used to re