Heteroepitaxial Fe films on GaN(0 0 0 1) are grown at 50, 350 and 500 1C by molecular beam epitaxy. The structural properties of these films are studied in situ by reflection high-energy electron diffraction f scans and ex situ by electron backscatter diffraction and longitudinal as well as azimuth
✦ LIBER ✦
On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz
✍ Scribed by A. Eroğlu; A. Tataroğlu; Ş. Altındal
- Book ID
- 113797894
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 534 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0167-9317
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