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On the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates

✍ Scribed by Frigeri, C.; Brinciotti, A.; Ritchie, D.M.; Donzelli, G.P.


Book ID
121410382
Publisher
Trans Tech Publications, Ltd.
Year
1999
Tongue
English
Weight
591 KB
Volume
69-70
Category
Article
ISSN
1662-9779

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Step-Bunching Evidence in Strained InxGa
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In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol