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On the optimum Ge fraction in Si/Si1−xGex heterojunction bipolar transistors

✍ Scribed by J.M. McGregor; S.C. Jain; D.J. Roulston

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 190 KB
Volume: 34
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(91)90222-k

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