Effect of Ge composition linear grading in the base on the Early voltage of Si/Si1−xGex/Si HBTs
✍ Scribed by W.R Zhang; W.G Wu; Z Zeng; J.S Luo
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 245 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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📜 SIMILAR VOLUMES
The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat
In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well