In this paper, we continue our study on the asymptotic behavior of the drift-diffusion model for semiconductor devices. We assume the mobilities are constants, and show in this case the dynamical system has a compact, connected, maximal attractor that attracts sets that are bounded in terms of the \
On the N-dimensional stationary drift-diffusion semiconductor equations
β Scribed by Jishan Fan; Hongwei Wu
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 88 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0362-546X
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π SIMILAR VOLUMES
This paper proves the uniqueness of solutions to the time dependent drift diffusion semiconductor equations in three dimensions with L 2 initial data. This answers the open problem raised by da Veiga.
In this paper, we study the global behavior of the time-dependent drift-diffusion model for semiconductor devices. Under certain assumptions on the mobilities, we first prove the existence of the global weak solutions with uniform \(L^{*}\) bounds. Then we show that the system, when considered as a
A number of transient and steady-state finite element formulations of the semiconductor drift-diffusion equations are studied and compared with respect to their accuracy and efficiency on a simple test structure (the Mock diode). A new formulation, with a consistent interpolation function used to re