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On the mechanism of oxide film formation on zirconium

✍ Scribed by O. Flint; J.H.O. Varley


Publisher
Elsevier Science
Year
1958
Tongue
English
Weight
1021 KB
Volume
6
Category
Article
ISSN
0022-3697

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πŸ“œ SIMILAR VOLUMES


Dissolution of the oxide film on zirconi
✍ R.D. Misch πŸ“‚ Article πŸ“… 1957 πŸ› Elsevier Science βš– 275 KB

The bars were then anodized in 1% KOH solution at room temperature to produce "stepgages." This was done by dividing each bar into l-cm sections on which successively increasing oxide film thicknesses were produced by anodizing from 0 to 150 V in 10-V increments. Each section was held at voltage one

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The kinetics of formation of insulating oxide fihns on zirconium was studied working at a constant voltage of 72,9 V. The results obtained were used to test two theoretical expressions for metal-oxide film formation kinetics. A value of 1-24 eV was obtained for the interfacial barrier height using

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✍ G.T. Rogers; P.H.G. Draper; S.S. Wood πŸ“‚ Article πŸ“… 1968 πŸ› Elsevier Science 🌐 English βš– 832 KB

The carbon, sulphur and boron contents of anodic ZrG, films formed in 0.1 M sodium carbonate, 0.1 M sulphuric acid and saturated ammonium borate solutions respectively have been determined. These impurity elements are distributed uniformily on a 2-3 ,em scale in the plane of the film. Over-all impur