The bars were then anodized in 1% KOH solution at room temperature to produce "stepgages." This was done by dividing each bar into l-cm sections on which successively increasing oxide film thicknesses were produced by anodizing from 0 to 150 V in 10-V increments. Each section was held at voltage one
On the mechanism of oxide film formation on zirconium
β Scribed by O. Flint; J.H.O. Varley
- Publisher
- Elsevier Science
- Year
- 1958
- Tongue
- English
- Weight
- 1021 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0022-3697
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Changes in the thermal oxidation of zirconium due to the presence of an initial electrolyticallyformed oxide layer are studied. The increase in thickness of the oxide on heating is measured optically and gravimetrically. The effect of the initial layer is the same as if it had been produced thermall
The kinetics of formation of insulating oxide fihns on zirconium was studied working at a constant voltage of 72,9 V. The results obtained were used to test two theoretical expressions for metal-oxide film formation kinetics. A value of 1-24 eV was obtained for the interfacial barrier height using
The carbon, sulphur and boron contents of anodic ZrG, films formed in 0.1 M sodium carbonate, 0.1 M sulphuric acid and saturated ammonium borate solutions respectively have been determined. These impurity elements are distributed uniformily on a 2-3 ,em scale in the plane of the film. Over-all impur