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On the mechanism of electron trap generation in gate oxides

✍ Scribed by W.D Zhang; J.F Zhang; M Lalor; D Burton; G Groeseneken; R Degraeve

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
131 KB
Volume
59
Category
Article
ISSN
0167-9317

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✦ Synopsis

This paper investigates the applicability of the proposed models for electron trap generation in gate oxides. It is found that neither the electron-hole recombination nor the high oxide field itself is the main source for the generation. Although the hole injection alone can generate traps, the electron injection leads to additional generation, which is significant during the typical breakdown test.

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In this work, we give some insights on the charging and discharging properties of electron traps created in gate oxide by homogeneous electron injection with the aim at further relating them to breakdown. We present a new procedure for determining the electrical properties of these traps. A model ba