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On the measurement of thermally activated slip parameters in tetrahedrally coordinated semiconductors

✍ Scribed by Escaig, B. ;Farvacque, J. L. ;Ferré, D.

Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
383 KB
Volume
71
Category
Article
ISSN
0031-8965

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## Different thermal activation energies of dark conduction in the ohmic and square-law regions have been measured for anthracene. The ohmic activation energy has been interpreted in terms of localised dominant esponcntially distributed hole and dominant electron levels within the band-gap. The