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On the measurement of the thickness of epitaxial and polycrystalline silicon layers in the submicron range

โœ Scribed by Severin, P. J. ;Eversteyn, F. C. ;Huizinga, F.

Book ID
105370614
Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
297 KB
Volume
28
Category
Article
ISSN
0031-8965

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For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi