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Measurements of the thickness of epitaxial films on silicon


Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
93 KB
Volume
15
Category
Article
ISSN
0042-207X

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Influence of Profile Parameters on the I
โœ Dipl.-Ing. Ch. Quick; Dr. E. Hild; Dr.-Ing. P. Schley; Dr.-Ing. J. Quick ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 323 KB ๐Ÿ‘ 2 views

For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi