✦ LIBER ✦

On the ion implantation of the group VI impurities into GaAs

✍ Scribed by P.N. Favennec; L. Henry; H. L'Haridon

Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 522 KB
Volume: 21
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(78)90001-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the ion implantation of the group VI

On the ion implantation of the group VI impurities into GaAs : P. N. Favennec, L. Henry and H. L'Haridon. Solid-St. Electron. 21, 705 (1978)

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 157 KB

Effect of dual implantation on the ampho

Effect of dual implantation on the amphoteric behavior of group IV ion implanted GaAs

✍ H. Kräutle 📂 Article 📅 1981 🏛 Elsevier Science ⚖ 355 KB

The behaviour of boron molecular ion imp

The behaviour of boron molecular ion implants into silicon

✍ David G. Beanland 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 913 KB

On the effects of implantation of ions i

On the effects of implantation of ions in the MeV energy range into silicon

✍ L.K. Wang; C.T. Chuang; G.P. Li 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 460 KB

Computer simulation model of the structu

Computer simulation model of the structure of ion implanted impurities in semiconductors

✍ E. Roman; Norberto Majlis 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 214 KB

On the Analysis of Hydrogen in as grown

On the Analysis of Hydrogen in as grown and Ion Implanted GaAs Single Crystals

✍ M. Udhayasankar; J. Kumar; P. Ramasamy; D.K. Avasthi; D. Kabiraj 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB 👁 2 views

Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t