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Effect of dual implantation on the amphoteric behavior of group IV ion implanted GaAs

✍ Scribed by H. Kräutle


Publisher
Elsevier Science
Year
1981
Weight
355 KB
Volume
182-183
Category
Article
ISSN
0029-554X

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Sohd benzene has been unplanted with mert-gas Ions atth energes rangmg from 16 to 100 keV Ihe small varuuon observed UI the relarwe concentration of the products has been found to depend mamly on The fact that the r&awe acsht of the nuclear and electromc noppmg mechantsms IS changmg along the ener\_