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Dual implantation and amphoteric behavior of Ge implants in GaAs

✍ Scribed by Y.S. Park; Y.K. Yeo; F.L. Pedrotti


Publisher
Elsevier Science
Year
1981
Weight
621 KB
Volume
182-183
Category
Article
ISSN
0029-554X

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Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t