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On the Interband Absorption in Disordered Semiconductors

✍ Scribed by Yu. D. Arbuzov; M. Yu. Kolenkin

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 304 KB
Volume: 138
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.2221380219

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## Abstract The absorption coefficient of a disordered semiconductor, α(ω), is calculated in the case of indirect transitions. The absorption coefficient is influenced by a random force field present in disordered semiconductors. The case of a smooth random field is considered. The same exponential

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