Phonon Assisted Interband Optical Transi
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B. Esser
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Article
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1973
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John Wiley and Sons
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English
โ 513 KB
## Abstract The absorption coefficient of a disordered semiconductor, ฮฑ(ฯ), is calculated in the case of indirect transitions. The absorption coefficient is influenced by a random force field present in disordered semiconductors. The case of a smooth random field is considered. The same exponential