Phonon Assisted Interband Optical Transitions in Disordered Semiconductors

✍ Scribed by B. Esser

• Publisher: John Wiley and Sons
• Year: 1973
• Tongue: English
• Weight: 513 KB
• Volume: 55
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220550205

✦ Synopsis

Abstract

The absorption coefficient of a disordered semiconductor, α(ω), is calculated in the case of indirect transitions. The absorption coefficient is influenced by a random force field present in disordered semiconductors. The case of a smooth random field is considered. The same exponential optical tail is obtained as in the case of direct transitions: In α(ω) ∼S (ℏω – ℰ~g~,i), where S is the inverse of some characteristic energy and ℰ~g~, 1 is the indirect band gap. Par enough in the allowed band the absorption coefficient takes on the usual quadratic frequency dependence.