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On the Hole Mobility of CuGaSe2

✍ Scribed by Wasim, S. M. ;Shánchez Porras, G.


Book ID
105377179
Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
200 KB
Volume
79
Category
Article
ISSN
0031-8965

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On the Temperature Dependence of Hole Mo
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## Abstract The influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i