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Characteristics of CuGaSe2 layers grown on GaAs substrates

✍ Scribed by Fujita, Miki; Kawaharazuka, Atsushi; Horikoshi, Yoshiji


Book ID
122367969
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
311 KB
Volume
378
Category
Article
ISSN
0022-0248

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Characteristics of lateralpnjunctions gr
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We have investigated the electrical properties of lateral pn junctions formed by Si-doped GaAs MBE growth over a patterned GaAs substrate. Current-voltage and capacitance-voltage profiling have revealed dissimilar doping profiles, dependent on the junction location. Junctions located at the lower fa