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Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates

โœ Scribed by Yae Okuno; Toshihiro Kawano; Masanari Koguchi; Kuniyasu Nakamura; Hiroshi Kakibayashi


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
919 KB
Volume
137
Category
Article
ISSN
0022-0248

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Laser excitation induced photoluminescen
โœ S.F. Yoon; K. Radhakrishnan; Q.H. Du ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 137 KB

An experimental investigation is presented on the influence of laser excitation on the photoluminescence (PL) linewidth in InAlAs layers grown lattice matched to InP substrates by molecular beam epitaxy (MBE). Measurements performed on silicon-doped samples and samples grown at different arsenic ove